PD57002-E STMicroelectronics, PD57002-E Datasheet - Page 8

• Manufacturer Part Number: PD57002-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57002-E

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 250mA
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 2W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.25A
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Min)
• Power Gain (typ)@vds: 15(Min)dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 7.1@28VpF
• Output Capacitance (typ)@vds: 5.8@28VpF
• Reverse Capacitance (typ): 0.1@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 45(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 4750mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Supply Voltage: 36 V
• Peak Power: 200 W typical
• Input Power: 23 dBm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5304-5

Typical performance
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Figure 10. Output power vs drain voltage
Figure 12. Output power vs drain current
Pout (W)
2.5
1.5
0.5
Pout (W)
2.5
1.5
0.5
2
0
3
2
0
1
1
10
0
12.5
25
15
50
17.5
75
Idq (mA)
Vdd (V)
20
925 MHz
100
960 MHz
960 MHz
22.5
125
925 MHz
25
Pin = 17.4dBm
945 MHz
Pin = 17.4dBm
Vdd = 28V
Idq = 15mA
150
27.5
945 MHz
Doc ID 12332 Rev 3
175
30
Figure 11. Efficiency vs drain voltage
Figure 13. Efficiency vs drain current
Nd (%)
60
50
40
30
20
10
Eff (%)
60
50
40
30
20
10
10
0
12.5
945 MHz
960 MHz
25
15
925 MHz
50
17.5
75
Idq (mA)
Vdd (V)
20
100
925 MHz
22.5
960 MHz
125
25
Pin = 17.4dBm
945 MHz
Pin = 17.4dBm
Vdd = 28V
Idq = 15mA
150
27.5
PD57002-E
175
30