PD57002-E STMicroelectronics, PD57002-E Datasheet - Page 7

• Manufacturer Part Number: PD57002-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57002-E

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 250mA
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 2W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.25A
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Min)
• Power Gain (typ)@vds: 15(Min)dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 7.1@28VpF
• Output Capacitance (typ)@vds: 5.8@28VpF
• Reverse Capacitance (typ): 0.1@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 45(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 4750mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Supply Voltage: 36 V
• Peak Power: 200 W typical
• Input Power: 23 dBm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5304-5

PD57002-E
Figure 6.
Figure 8.
Pout (W)
2.5
1.5
0.5
Pg (dB)
18
17
16
15
14
13
12
10
11
2
0
1
0
0
0.25
960 MHz
945 MHz
0.01
Output power vs input power
Power gain vs output power
0.5
0.02
925 MHz
0.75
0.03
Pout (W)
1
Pin (W)
1.25
0.04
925 MHz
1.5
960 MHz
0.05
1.75
Idq = 15mA
Vdd = 28V
945 MHz
Idq = 15mA
Vdd = 28V
0.06
2
Doc ID 12332 Rev 3
0.07
2.25
Figure 7.
Figure 9.
IRL (dB)
-10
-15
-20
-25
-30
Eff (%)
55
50
45
40
35
30
25
20
15
-5
0
0
0
0.25
0.25
960 MHz
945 MHz
925 MHz
Input return loss vs output power
Efficiency vs output power
0.5
0.5
0.75
0.75
960 MHz
925 MHz
Pout (W)
Pout W)
1
1
945 MHz
1.25
1.25
Typical performance
1.5
1.5
1.75
1.75
Idq = 15mA
Idq = 15mA
Vdd = 28V
Vdd = 28V
2
2
2.25
2.25
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