BLF1820-90,112 NXP Semiconductors, BLF1820-90,112 Datasheet - Page 12

TRANSISTOR RF LDMOS SOT502A

BLF1820-90,112

Manufacturer Part Number
BLF1820-90,112
Description
TRANSISTOR RF LDMOS SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF1820-90,112

Package / Case
SOT502A
Transistor Type
LDMOS
Frequency
2GHz
Gain
11dB
Voltage - Rated
65V
Current Rating
12A
Current - Test
750mA
Voltage - Test
26V
Power - Output
90W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
12 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056520112
BLF1820-90
BLF1820-90
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
613524/02/pp
12
Date of release:
2003 Feb 10
Fax: +31 40 27 24825
Document order number:
9397 750 10916
SCA75

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