BLF1820-90,112 NXP Semiconductors, BLF1820-90,112 Datasheet - Page 5

• Manufacturer Part Number: BLF1820-90,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF1820-90,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 750mA
• Voltage - Test: 26V
• Power - Output: 90W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056520112; BLF1820-90; BLF1820-90

Philips Semiconductors
2003 Feb 10
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
(1) I
Fig.4
V
Fig.6
1
DS
DS
= 2000 MHz; f
(dB)
G p
( )
= 26 V; I
= 26 V; I
Z i
15
10
DQ
5
6
4
2
0
2
1.6
0
= 600 mA.
Power gain and drain efficiency as functions
of average load power; typical values.
Input impedance as a function of frequency
(series components); typical values.
DQ
DQ
(2)
(1)
= 750 mA; T
= 750 mA; P
2
(3)
= 2000.1 MHz.
(2) I
1.8
40
(1)
DQ
h
L
= 90 W; T
(2)
= 750 mA.
25 C;
(3)
h
80
2
25 C.
(3) I
r i
x i
P L (W)
f (GHz)
DQ
MLD560
MLD558
= 900 mA.
120
2.2
50
40
30
20
10
0
(%)
D
5
handbook, halfpage
handbook, halfpage
V
f
(1) I
Fig.5
V
Fig.7
1
DS
DS
(dBc)
= 2000 MHz; f
d 3
( )
Z L
= 26 V; I
= 26 V; I
20
40
60
80
DQ
0
4
2
0
2
4
1.6
0
= 600 mA.
Intermodulation distortion products as
functions of peak envelope load power;
typical values.
Load impedance as a function of frequency
(series components); typical values.
DQ
DQ
= 750 mA; T
= 750 mA; P
2
= 2000.1 MHz.
R L
X L
(1)
(2)
(3)
(2) I
1.8
40
DQ
h
L
= 90 W; T
= 750 mA.
25 C;
h
80
2
25 C.
BLF1820-90
Product specification
P L (PEP) (W)
(3) I
f (GHz)
DQ
MLD559
= 900 mA.
MLD561
120
2.2