BLF1820-90,112 NXP Semiconductors, BLF1820-90,112 Datasheet - Page 8

• Manufacturer Part Number: BLF1820-90,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF1820-90,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 750mA
• Voltage - Test: 26V
• Power - Output: 90W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056520112; BLF1820-90; BLF1820-90

Philips Semiconductors
2003 Feb 10
handbook, full pagewidth
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
C3
R1
Fig.9 Component layout for 2 GHz class-AB test circuit.
C6
PH990118
PH990118
C5
C2
C4
V GS
50
C1
INPUT
INPUT
8
C17
V DS
C16
C11
C10
C7
50
R2
F1
C13
C12
r
OUTPUT
OUTPUT
= 2.2), thickness 0.79 mm.
C8
C15
MGU327
C14
C9
95
BLF1820-90
Product specification