BFG310/XR,215 NXP Semiconductors, BFG310/XR,215 Datasheet - Page 9

• Manufacturer Part Number: BFG310/XR,215
• Description: TRANS NPN 4.5V 18GHZ SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BFG310/XR,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB @ 2GHz
• Gain: 18dB
• Power - Max: 60mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 3V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14 GHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1975-2; 934057938215; BFG310/XR T/R

Philips Semiconductors
9. Package outline
Fig 10. Package outline SOT143R (SC-61AA)
9397 750 14244
Product data sheet
Plastic surface mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
SOT143R
OUTLINE
1.1
0.9
A
max
A 1
0.1
3
2
y
0.48
0.38
b p
IEC
0.88
0.78
b 1
e 1
D
e
0.15
0.09
c
JEDEC
3.0
2.8
D
b 1
REFERENCES
b p
0
Rev. 01 — 2 February 2005
1.4
1.2
E
4
1
1.9
w
SC-61AA
e
B
JEITA
scale
M
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
A
0.55
0.25
L p
A 1
0.45
0.25
Q
NPN 14 GHz wideband transistor
detail X
PROJECTION
0.2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
EUROPEAN
v
H E
E
0.1
w
BFG310/XR
L p
Q
0.1
y
A
ISSUE DATE
99-09-13
04-11-16
c
SOT143R
X
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