BFG31,115 NXP Semiconductors, BFG31,115 Datasheet

TRANS PNP 10V 5GHZ SOT223

BFG31,115

Manufacturer Part Number
BFG31,115
Description
TRANS PNP 10V 5GHZ SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG31,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1W
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
15V
Transistor Type
PNP
Frequency - Transition
5GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 70mA, 10V
Dc Current Gain Hfe Max
25 @ 70mA @ 10V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
PNP
Maximum Operating Frequency
5000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.1 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934000180115::BFG31 T/R::BFG31 T/R
Product specification
Supersedes data of November 1992
DATA SHEET
BFG31
PNP 5 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1995 Sep 12

Related parts for BFG31,115

BFG31,115 Summary of contents

Page 1

DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 DISCRETE SEMICONDUCTORS 1995 Sep 12 ...

Page 2

... NXP Semiconductors PNP 5 GHz wideband transistor FEATURES  High output voltage capability  High gain bandwidth product  Good thermal stability  Gold metallization ensures excellent reliability. DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope intended for wideband amplifier applications ...

Page 3

... NXP Semiconductors PNP 5 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th j-s soldering point Note the temperature at the soldering point of the collector tab. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage ...

Page 4

... NXP Semiconductors PNP 5 GHz wideband transistor 1.2 handbook, halfpage P tot (W) 1.0 0.8 0.6 0.4 0 100 Fig.2 Power derating curve. 6 handbook, halfpage C re (pF  MHz; T amb Fig.4 Feedback capacitance as a function of collector-emitter voltage. 1995 Sep 12 MBB344 handbook, halfpage h 150 200 MBB346 handbook, halfpage ...

Page 5

... NXP Semiconductors PNP 5 GHz wideband transistor 40 handbook, halfpage d im (dB   650 mV amb f = 443.25 MHz. (p+qr) Fig.6 Intermodulation distortion as a function of collector current. 10 handbook, halfpage d 2 (dB   dBmV amb f = 450 MHz. (p+q) Fig.8 Second order intermodulation distortion as a function of collector current. ...

Page 6

... NXP Semiconductors PNP 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 1995 Sep scale 0.32 6.7 3.7 7.3 4.6 2 ...

Page 7

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 8

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 9

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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