BFG31,115 NXP Semiconductors, BFG31,115 Datasheet - Page 5

• Manufacturer Part Number: BFG31,115
• Description: TRANS PNP 10V 5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG31,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000180115::BFG31 T/R::BFG31 T/R

NXP Semiconductors
1995 Sep 12
handbook, halfpage
handbook, halfpage
d im
PNP 5 GHz wideband transistor
(dB)
(dB)
d 2
V
f
V
f
(p+qr)
(p+q)
CE
CE
Fig.6
Fig.8 Second order intermodulation distortion
= 10 V; V
= 10 V; V
40
45
50
55
60
65
10
20
30
40
50
60
= 450 MHz.
= 443.25 MHz.
40
10
as a function of collector current.
Intermodulation distortion as a function
of collector current.
o
o
= 650 mV; T
= 50 dBmV; T
30
60
50
amb
amb
= 25 C;
= 25 C;
70
80
I
90
C
(mA)
I
MBB348
C
MBB350
(mA)
100
110
5
handbook, halfpage
handbook, halfpage
(dB)
V
f
d 2
V
f
d im
(dB)
(p+qr)
(p+q)
CE
CE
Fig.7
Fig.9
= 10 V; V
= 10 V; V
50
55
60
65
10
20
30
40
50
60
= 810 MHz.
= 848.25 MHz.
40
10
Intermodulation distortion as a function
of collector current.
Second order intermodulation distortion
as a function of collector current.
o
o
= 550 mV; T
= 50 dBmV; T
30
60
50
amb
amb
= 25 C;
80
= 25 C;
70
Product specification
100
90
I
C
I
C
MBB349
MBB351
(mA)
BFG31
(mA)
120
110