BFG31,115 NXP Semiconductors, BFG31,115 Datasheet - Page 3

• Manufacturer Part Number: BFG31,115
• Description: TRANS PNP 10V 5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG31,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000180115::BFG31 T/R::BFG31 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. d
3. d
1995 Sep 12
R
V
V
V
I
h
C
C
C
f
G
V
V
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
(BR)CBO
(BR)CEO
(BR)EBO
o
o
PNP 5 GHz wideband transistor
th j-s
cb
eb
re
UM
V
V
V
measured at f
V
V
V
measured at f
s
im
im
p
q
r
p
q
r
UM
= V
= V
is the temperature at the soldering point of the collector tab.
= V
= V
= V
= V
= 60 dB; I
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
o
o
o
o
o
o
6 dB; f
6 dB; f
at d
6 dB; f
= at d
6 dB; f
thermal resistance from junction to
soldering point
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector-base capacitance
emitter-base capacitance
feedback capacitance
transition frequency
maximum unilateral power gain; note 1
output voltage
output voltage
im
(p+qr)
im
(p+qr)
= 60 dB; f
C
r
r
q
q
= 60 dB; f
= 70 mA; V
= 860.25 MHz;
= 455.25 MHz;
= 858.25 MHz;
= 453.25 MHz;
= 848.25 MHz.
= 443.25 MHz.
PARAMETER
PARAMETER
p
= 850.25 MHz;
p
= 445.25 MHz;
CE
C
= 70 mA; V
= 10 V; R
L
CE
= 75 ; T
= 10 V; R
up to T
open emitter; I
open base; I
open collector; I
I
I
T
I
I
I
T
I
f = 500 MHz; T
I
f = 500 MHz; T
I
f = 800 MHz; T
note 2
note 3
E
C
C
C
C
C
C
C
amb
amb
= 0; V
= 70 mA; V
= 0; V
= 0; V
= 0; V
= 70 mA; V
= 70 mA; V
= 70 mA; V
amb
3
12
= 25 C
= 25 C
L
= 25 C;
is zero and
s
= 75 ; T
CB
CB
EB
CE
CONDITIONS
= 135 C; note 1
CONDITIONS
= 10 V
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz;
= 10 V; f = 1 MHz;
C
= 10 mA
C
amb
amb
amb
CE
CE
CE
CE
E
= 10 mA
amb
= 0.1 mA
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
= 25 C
G
= 25 C;
UM
=
10
log
20
18
3

25








MIN.
-------------------------------------------------------- dB.

THERMAL RESISTANCE
1
–
s





1.8
5
1.6
5
16
12
600
550
11
TYP.
Product specification
s
2
40 K/W
21
 1

2
–



1









MAX.
BFG31
s
22
2

V
V
A
pF
pF
mV
mV
V
pF
GHz
dB
dB
UNIT