PBR941,215 NXP Semiconductors, PBR941,215 Datasheet - Page 11
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PBR941,215
Manufacturer Part Number
PBR941,215
Description
TRANSISTOR NPN UHF 50MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PBR941215.pdf
(16 pages)
Specifications of PBR941,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2dB @ 1GHz ~ 2GHz
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.05 A
Power Dissipation
360 mW
Maximum Operating Frequency
8000 MHz (Typ)
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1174-2
934043060215
PBR941 T/R
934043060215
PBR941 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBR941,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
1998 Aug 10
handbook, full pagewidth
handbook, full pagewidth
UHF wideband transistor
f = 1 GHz; V
f = 2 GHz; V
CE
CE
= 6 V; I
= 6 V; I
C
C
= 5 mA; Z
= 5 mA; Z
region source
region source
unstable
unstable
180
180
Fig.17 Common emitter available gain circles; typical values.
Fig.18 Common emitter available gain circles; typical values.
o
o
= 50 .
= 50 .
0
135
135
135
135
0.2
0.2
0.2
0.2
G = 10 dB
0.2
0.2
G = 16 dB
G = 15 dB
G = 9 dB
G = 14 dB
0.5
0.5
0.5
0.5
G max = 10.26 dB
G = 8 dB
0.5
0.5
NF = 2.3 dB
NF = 2.1 dB
NF = 2.5 dB
11
90
90
OPT
90
90
1
1
1
1
1
1
NF = 1.7 dB
NF = 1.9 dB
NF = 1.5 dB
OPT
2
2
2
2
2
2
5
5
region load
45
45
unstable
45
45
region load
unstable
5
5
5
5
MDA885
MDA886
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
PBR941