PBR941,215 NXP Semiconductors, PBR941,215 Datasheet - Page 2

• Manufacturer Part Number: PBR941,215
• Description: TRANSISTOR NPN UHF 50MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBR941,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 360 mW
• Maximum Operating Frequency: 8000 MHz (Typ)
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1174-2; 934043060215; PBR941 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
Note
1. T
1998 Aug 10
C
f
G
F
P
R
T
SYMBOL
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
Communication and instrumentation systems.
tot
re
th j-s
UHF wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
PARAMETER
I
I
I
T
f = 1 GHz
T
P
C
C
C
S
amb
s
tot
= 0; V
= 15 mA; V
= 15 mA; V
= 60 C; note 1
=
= 360 mW
= 25 C
opt
CB
2
; I
C
PINNING - SOT23
handbook, halfpage
= 6 V; f = 1 MHz
= 5 mA; V
CONDITIONS
CE
CE
PIN
Marking code: V0.
1
2
3
= 6 V; f
= 6 V; f = 1 GHz;
Top view
Fig.1 Simplified outline and symbol.
base
emitter
collector
CE
m
= 6 V;
1
= 1 GHz
3
DESCRIPTION
2
0.3
8
15
1.4
TYP.
MAM255
Product specification
1
360
320
MAX.
PBR941
3
2
pF
GHz
dB
dB
mW
K/W
UNIT