PBR941,215 NXP Semiconductors, PBR941,215 Datasheet - Page 2
![TRANSISTOR NPN UHF 50MA SOT23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
PBR941,215
Manufacturer Part Number
PBR941,215
Description
TRANSISTOR NPN UHF 50MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PBR941215.pdf
(16 pages)
Specifications of PBR941,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2dB @ 1GHz ~ 2GHz
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.05 A
Power Dissipation
360 mW
Maximum Operating Frequency
8000 MHz (Typ)
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1174-2
934043060215
PBR941 T/R
934043060215
PBR941 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBR941,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
Note
1. T
1998 Aug 10
C
f
G
F
P
R
T
SYMBOL
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
Communication and instrumentation systems.
tot
re
th j-s
UHF wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
PARAMETER
I
I
I
T
f = 1 GHz
T
P
C
C
C
S
amb
s
tot
= 0; V
= 15 mA; V
= 15 mA; V
= 60 C; note 1
=
= 360 mW
= 25 C
opt
CB
2
; I
C
PINNING - SOT23
handbook, halfpage
= 6 V; f = 1 MHz
= 5 mA; V
CONDITIONS
CE
CE
PIN
Marking code: V0.
1
2
3
= 6 V; f
= 6 V; f = 1 GHz;
Top view
Fig.1 Simplified outline and symbol.
base
emitter
collector
CE
m
= 6 V;
1
= 1 GHz
3
DESCRIPTION
2
0.3
8
15
1.4
TYP.
MAM255
Product specification
1
360
320
MAX.
PBR941
3
2
pF
GHz
dB
dB
mW
K/W
UNIT