PBR941,215 NXP Semiconductors, PBR941,215 Datasheet - Page 6
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PBR941,215
Manufacturer Part Number
PBR941,215
Description
TRANSISTOR NPN UHF 50MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PBR941215.pdf
(16 pages)
Specifications of PBR941,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2dB @ 1GHz ~ 2GHz
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.05 A
Power Dissipation
360 mW
Maximum Operating Frequency
8000 MHz (Typ)
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1174-2
934043060215
PBR941 T/R
934043060215
PBR941 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBR941,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
1998 Aug 10
handbook, halfpage
handbook, halfpage
UHF wideband transistor
f = 1 GHz; V
Fig.6
I
Fig.8
C
= 15 mA; V
gain
(dB)
gain
(dB)
20
16
12
50
40
30
20
10
8
4
0
0
10
0
MSG
Gain as a function of collector current;
typical values.
Gain as a function of frequency; typical
values.
CE
MSG
CE
= 6 V.
= 6 V.
10
10
2
G UM
G max
G UM
20
10
3
G max
30
f (MHz)
I C (mA)
MSG
MDA877
MDA875
10
40
4
6
handbook, halfpage
handbook, halfpage
I
Fig.7
I
Fig.9
C
C
= 5 mA; V
= 30 mA; V
gain
(dB)
gain
(dB)
50
40
30
20
10
50
40
30
20
10
0
0
10
10
Gain as a function of frequency; typical
values.
Gain as a function of frequency; typical
values.
CE
MSG
MSG
CE
= 6 V.
= 6 V.
10
10
2
2
G UM
G UM
10
10
3
3
G max
Product specification
G max
f (MHz)
f (MHz)
PBR941
MSG
MSG
MDA876
MDA878
10
10
4
4