BFR505,215 NXP Semiconductors, BFR505,215 Datasheet

TRANS NPN 15V 9GHZ SOT-23

BFR505,215

Manufacturer Part Number
BFR505,215
Description
TRANS NPN 15V 9GHZ SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR505215.pdf (13 pages)

Specifications of BFR505,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.1dB @ 900MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1988-2
934018740215
BFR505 T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Quick reference data
The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the
RF front end in wideband applications in the GHz range, such as analog and digital
cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers
and satellite TV tuners (SATV).
The transistor is encapsulated in a plastic SOT23 envelope.
Table 1:
Symbol Parameter
V
V
I
P
h
C
f
G
C
T
S
FE
CBO
CES
tot
re
UM
21
BFR505
NPN 9 GHz wideband transistor
Rev. 03 — 20 July 2004
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
2
collector-base
voltage
collector-emitter
voltage
DC collector
current
total power
dissipation
DC current gain
feedback
capacitance
transition frequency I
maximum unilateral
power gain
insertion power
gain
Quick reference data
Conditions
open emitter
R
up to T
I
I
I
T
I
T
I
T
C
C
C
C
C
C
amb
amb
amb
BE
= 5 mA; V
= i
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 0
c
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
= 0 A; V
s
= 135 C
CE
CE
CE
CE
CE
CB
= 6 V
= 6 V; f = 1 GHz
= 6 V;
= 6 V;
= 6 V;
= 6 V; f = 1 MHz
Product data sheet
[1]
Min
-
-
-
-
60
-
-
-
-
13
Typ
-
-
-
-
120
0.3
9
17
10
14
Max
20
15
18
150
250
-
-
-
-
-
Unit
V
V
mA
mW
pF
GHz
dB
dB
dB

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BFR505,215 Summary of contents

Page 1

BFR505 NPN 9 GHz wideband transistor Rev. 03 — 20 July 2004 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the ...

Page 2

Philips Semiconductors Table 1: Symbol Parameter F [ the temperature at the soldering point of the collector tab Pinning information Table 2: Pin Ordering information Table 3: Type number BFR505 4. Marking ...

Page 3

Philips Semiconductors 5. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CES V EBO tot T stg the temperature at the soldering ...

Page 4

Philips Semiconductors Table unless otherwise specified. j Symbol Parameter ITO [ [ mA and f 200 P tot (mW) 150 100 50 0 ...

Page 5

Philips Semiconductors 0 (pF) 0.3 0.2 0 MHz. C Fig 3. Feedback capacitance as a function of collector-base voltage. 25 gain (dB ...

Page 6

Philips Semiconductors 50 gain (dB) 40 ( 1. (2) MSG. ( max Fig 7. Gain as a ...

Page 7

Philips Semiconductors Fig 11. Noise circle figure. Fig 12. Noise circle figure. 9397 750 13396 Product data sheet pot. unst. region 135 0.5 stability circle 0.2 0 0.2 0.5 180 0.2 0.5 135 ...

Page 8

Philips Semiconductors Fig 13. Common emitter input reflection coefficient (S Fig 14. Common emitter forward transmission coefficient (S 9397 750 13396 Product data sheet 135 0.5 0.2 0 0.2 0.5 180 0.2 0.5 135 ...

Page 9

Philips Semiconductors Fig 15. Common emitter reverse transmission coefficient (S Fig 16. Common emitter output reflection coefficient (S 9397 750 13396 Product data sheet 135 0.5 0.4 0.3 0.2 0.1 180 135 mA. ...

Page 10

Philips Semiconductors 8. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...

Page 11

Philips Semiconductors 9. Revision history Table 8: Revision history Document ID Release date BFR505_3 20040720 • Modifications: Marking code added • Data sheet updated to latest standards. BFR505_CNV_2 19971204 9397 750 13396 Product data sheet Data sheet status Change notice ...

Page 12

Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 13

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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