BFR505,215 NXP Semiconductors, BFR505,215 Datasheet - Page 7

• Manufacturer Part Number: BFR505,215
• Description: TRANS NPN 15V 9GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR505,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1988-2; 934018740215; BFR505 T/R

Philips Semiconductors
9397 750 13396
Product data sheet
Fig 11. Noise circle figure.
Fig 12. Noise circle figure.
Z
V
Z
V
o
o
CE
CE
= 50 .
= 50 .
= 6 V; I
= 6 V; I
stability
circle
stability
circle
180
180
C
C
= 5 mA; f = 900 MHz.
= 5 mA; f = 2000 MHz.
0
0
pot. unst.
region
Rev. 03 — 20 July 2004
135
135
135
135
0.2
0.2
0.2
0.2
pot. unst.
region
0.2
0.2
0.5
0.5
0.5
0.5
0.5
0.5
F = 4 dB
F = 3 dB
90
90
F = 2.5 dB
90
90
1
1
1
1
1
1
F = 3 dB
F
min
F = 2 dB
2
2
= 1.9 dB
opt
F = 1.5 dB
NPN 9 GHz wideband transistor
F
min
2
2
2
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
opt
= 1.3 dB
5
45
45
45
45
10
10
5
5
5
5
mra728
mra729
0
0
BFR505
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
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