BFR505,215 NXP Semiconductors, BFR505,215 Datasheet - Page 5

• Manufacturer Part Number: BFR505,215
• Description: TRANS NPN 15V 9GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR505,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1988-2; 934018740215; BFR505 T/R

Philips Semiconductors
9397 750 13396
Product data sheet
Fig 3. Feedback capacitance as a function of
Fig 5. Gain as a function of collector current.
(pF)
gain
(dB)
(1) MSG.
(2) G
C
re
0.4
0.3
0.2
0.1
25
20
15
10
0
5
0
I
collector-base voltage.
V
C
0
0
CE
UM
= 0 A; f = 1 MHz.
.
= 6 V; f = 900 MHz.
2
4
4
6
8
I
C
8
(mA)
V
(1)
(2)
CB
mra720
mra764
(V)
10
12
Rev. 03 — 20 July 2004
Fig 4. Transition frequency as a function of collector
Fig 6. Gain as a function of collector current.
(GHz)
(1) V
(2) V
gain
(dB)
(1) MSG.
(2) G
(3) G
f
T
12
25
20
15
10
8
4
0
5
0
10
T
current.
V
0
amb
CE
CE
CE
max
UM
1
= 6 V.
= 6 V; f = 2 GHz.
.
.
= 3 V.
(1)
= 25 C; f = 1 GHz.
1
4
NPN 9 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
8
(1)
(2)
I
I
C
C
BFR505
(mA)
(mA)
(2)
(3)
mra721
mra765
10
12
2
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