BFT93,215 NXP Semiconductors, BFT93,215 Datasheet - Page 6

• Manufacturer Part Number: BFT93,215
• Description: TRANS PNP 12V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT93,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.4dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5 GHz
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 2 V
• Continuous Collector Current: - 35 mA
• Power Dissipation: 300 mW
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 20
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1993-2; 933347740215; BFT93 T/R

NXP Semiconductors
November 1992
handbook, halfpage
PNP 5 GHz wideband transistor
V
Fig.6
(dB)
CE
F
= 5 V; Z
5
4
3
2
1
0
0
Minimum noise figure as a function of
collector current.
s
= opt.; f = 500 MHz; T
10
20
amb
30
= 25 C.
40
I C (mA)
MEA923
50
6
handbook, halfpage
I
Fig.7
C
(dB)
F
= 2 mA; V
8
6
4
2
0
10
–1
Minimum noise figure as a function of
frequency.
CE
= 5 V; Z
s
= opt.; T
1
amb
= 25 C.
f (GHz)
Product specification
MEA924
BFT93
10