BFT92W,115 NXP Semiconductors, BFT92W,115 Datasheet - Page 2
![TRANS PNP 35MA 15V 4GHZ SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BFT92W,115
Manufacturer Part Number
BFT92W,115
Description
TRANS PNP 35MA 15V 4GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFT92W115.pdf
(14 pages)
Specifications of BFT92W,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
4GHz
Noise Figure (db Typ @ F)
2.5dB ~ 3dB @ 500MHz ~ 1GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
20 @ 15mA @ 10V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
PNP
Maximum Operating Frequency
4000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1656-2
934022960115
BFT92W T/R
934022960115
BFT92W T/R
NXP Semiconductors
FEATURES
High power gain
Gold metallization ensures
SOT323 (S-mini) package.
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
May 1994
V
V
I
P
h
C
f
G
F
T
SYMBOL
C
T
FE
excellent reliability
j
CBO
CEO
tot
PNP 4 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain I
noise figure
junction temperature
PARAMETER
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
PIN
1
2
3
open base
up to T
open emitter
I
I
I
f = 500 MHz
f = 500 MHz; T
I
f = 500 MHz
C
C
C
C
C
= 15 mA; V
= 0; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
base
emitter
collector
s
= 93 C; note 1
CB
CONDITIONS
DESCRIPTION
= 10 V; f = 1 MHz
2
CE
CE
CE
CE
amb
= 10 V;
= 10 V
= 10 V;
= 10 V;
= 25 C
20
MIN.
handbook, 2 columns
Marking code: W1.
50
0.5
4
17
2.5
Top view
TYP.
Fig.1 SOT323.
Product specification
1
20
15
35
300
150
MAX.
3
BFT92W
MBC870
2
V
V
mA
mW
pF
GHz
dB
dB
C
UNIT