BFT92W,115 NXP Semiconductors, BFT92W,115 Datasheet - Page 4

• Manufacturer Part Number: BFT92W,115
• Description: TRANS PNP 35MA 15V 4GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFT92W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 4GHz
• Noise Figure (db Typ @ F): 2.5dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 20 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1656-2; 934022960115; BFT92W T/R

NXP Semiconductors
May 1994
PNP 4 GHz wideband transistor
I
C
(mW)
P tot
= 0; f = 1 MHz.
(pF)
C re
Fig.4
400
300
200
100
0.8
0.6
0.4
0.2
1
0
0
0
0
Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.2 Power derating curve.
4
50
8
100
12
150
16
T
s
V
MLB540
CB
( C)
MLB542
o
(V)
200
20
4
V
f = 500 MHz; T
CE
h
Fig.3
(GHz)
FE
f
= 10 V; T
Fig.5
T
60
40
20
0
6
4
0
2
0
1
DC current gain as a function of collector
current, typical values.
amb
j
Transition frequency as a function of
collector current, typical values.
= 25 C.
= 25 C.
10
10
20
V
Product specification
CE
10 V
5 V
I
C
=
(mA)
I
C
BFT92W
(mA)
MLB541
MLB543
10
30
2