BFG540/X,215 NXP Semiconductors, BFG540/X,215 Datasheet - Page 8
![TRANS NPN 15V 9GHZ SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BFG540/X,215
Manufacturer Part Number
BFG540/X,215
Description
TRANS NPN 15V 9GHZ SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BFG540X215.pdf
(14 pages)
Specifications of BFG540/X,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
400mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 40mA @ 8V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1983-2
934018850215
BFG540/X T/R
934018850215
BFG540/X T/R
NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
C
C
= 10 mA; V
= 10 mA; V
CE
CE
= 8 V; Z
= 8 V; Z
o
o
= 50 ; f = 900 MHz.
= 50 ; f = 2 GHz.
180
180
G max = 11.4 dB
0
0
135
135
135
135
0.2
0.2
MS
0.2
0.2
0.2
F min = 2.1 dB
0.5
0.5
0.5
0.5
Fig.15 Noise circle figure.
G = 10 dB
Fig.16 Noise circle figure.
Rev. 05 - 21 November 2007
F = 2.5 dB
OPT
G = 9 dB
F = 3 dB
F = 1.5 dB
0.5
0.5
F min = 1.3 dB
F = 2 dB
F = 3 dB
F = 4 dB
G = 8 dB
OPT
90
90
90
90
1
1
1
1
1
1
2
2
2
2
2
2
5
5
45
45
45
45
5
5
5
5
MRA762
MRA763
BFG540; BFG540/X;
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG540/XR
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