BFG540/X,215 NXP Semiconductors, BFG540/X,215 Datasheet - Page 9

• Manufacturer Part Number: BFG540/X,215
• Description: TRANS NPN 15V 9GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG540/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1983-2; 934018850215; BFG540/X T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
C
C
= 40 mA; V
= 40 mA; V
CE
CE
= 8 V; Z
= 8 V.
o
= 50 .
Fig.18 Common emitter forward transmission coefficient (s
180
180
Fig.17 Common emitter input reflection coefficient (s
40 MHz
50
0
135
135
135
135
40
0.2
0.2
0.2
30
0.5
0.5
Rev. 05 - 21 November 2007
20
3 GHz
0.5
10
90
90
90
90
1
1
1
3 GHz
2
40 MHz
2
2
5
45
45
45
45
5
5
MRA756
MRA757
11
BFG540; BFG540/X;
).
0
0
21
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG540/XR
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