BFS25A,115 NXP Semiconductors, BFS25A,115 Datasheet
BFS25A,115
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BFS25A T/R
BFS25A T/R
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BFS25A,115 Summary of contents
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DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS December 1997 ...
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... NXP Semiconductors NPN 5 GHz wideband transistor FEATURES Low current consumption Low noise figure Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies GHz ...
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... NXP Semiconductors NPN 5 GHz wideband transistor THERMAL RESISTANCE SYMBOL PARAMETER R thermal resistance from junction to th j-s soldering point Note the temperature at the soldering point of the collector tab. s CHARACTERISTICS = 25 C, unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain ...
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... NXP Semiconductors NPN 5 GHz wideband transistor 40 handbook, halfpage P tot (mW 100 Fig.2 Power derating curve. 0.5 handbook, halfpage C re (pF) 0.4 0.3 0.2 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage. December 1997 MRC038 - 1 handbook, halfpage 150 200 MRC031 handbook, halfpage ( 100 h FE ...
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... NXP Semiconductors NPN 5 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G gain. 25 handbook, halfpage gain (dB MSG 0 500 MHz amb Fig.6 Gain as a function of collector current. 50 handbook, halfpage gain (dB MSG 10 0 0.01 0 0.5 mA amb Fig.8 Gain as a function of frequency. ...
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... NXP Semiconductors NPN 5 GHz wideband transistor 4 handbook, halfpage F (dB − amb Fig.10 Minimum noise figure as a function of collector current. handbook, full pagewidth stability circle 180° mA 500 MHz December 1997 MCD145 handbook, halfpage (dB GHz 1 GHz 500 MHz (mA Fig.11 Minimum noise figure as a function of pot. unst. 90° ...
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... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth stability circle 180° mA GHz handbook, full pagewidth 180° mA GHz December 1997 90° 1 135° 0.5 MSG = 11.1 dB 0.2 0 0.5 −135° 1 −90° Fig.13 Noise circle. ...
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... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth 180° mA Fig.15 Common emitter input reflection coefficient (S handbook, full pagewidth 180° mA Fig.16 Common emitter forward transmission coefficient (S December 1997 90° 1 135° 0.5 0.2 0.2 0 GHz 0.2 0.5 −135° ...
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... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth 180° mA Fig.17 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180° mA Fig.18 Common emitter output reflection coefficient (S December 1997 90° 135° 40 MHz 0.5 0.4 0.3 0.2 0.1 −135° ...
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... NXP Semiconductors NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 December 1997 scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...