BFS25A,115 NXP Semiconductors, BFS25A,115 Datasheet - Page 2

• Manufacturer Part Number: BFS25A,115
• Description: TRANS NPN 5V 6.5MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS25A,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021360115; BFS25A T/R; BFS25A T/R

NXP Semiconductors
FEATURES
 Low current consumption
 Low noise figure
 Gold metallization ensures
 SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
December 1997
It is designed for use in RF amplifiers
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
excellent reliability
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
I
T
I
T
I
T
base
emitter
collector
C
C
c
c
amb
amb
amb
= 0.5 mA; V
= 0.5 mA; V
= 0.5 mA; V
= 1 mA; V
open emitter
open base
open collector
up to T
Code: N6
DESCRIPTION
= 25 C
= 25 C
= 25 C
s
= 170 C; note 1
2
s
CONDITIONS
= 170 C; note 1
CE
CE
CE
CONDITIONS
CE
= 1 V; f = 1 GHz;
= 1 V; f = 1 GHz;
= 1 V; f = 1 GHz;
= 1 V; T
j
= 25 C
handbook, 2 columns




50
3.5


MIN.
Top view





65

Fig.1 SOT323.
MIN.




80
5
13
1.8
Product specification
TYP.
1
8
5
2
6.5
32
+150
175
MAX.
3
BFS25A
8
5
6.5
32
200



MBC870
MAX.
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT