BFS25A,115 NXP Semiconductors, BFS25A,115 Datasheet - Page 6

• Manufacturer Part Number: BFS25A,115
• Description: TRANS NPN 5V 6.5MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS25A,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021360115; BFS25A T/R; BFS25A T/R

NXP Semiconductors
December 1997
handbook, halfpage
handbook, full pagewidth
NPN 5 GHz wideband transistor
V
Fig.10 Minimum noise figure as a function of
I
f = 500 MHz; Z
C
CE
= 1 mA; V
(dB)
F
= 1 V; T
4
3
2
1
0
10
−1
collector current.
amb
CE
o
= 1 V;
= 25 C.
= 50 .
stability
circle
180°
1
0
1 GHz
500 MHz
f = 2 GHz
I C (mA)
−135°
135°
0.2
0.2
MSG = 13.9 dB
pot. unst.
region
0.2
12 dB
MCD145
0.5
0.5
10 dB
10
Fig.12 Noise circle.
0.5
−90°
90°
6
1
1
F = 6 dB
1
handbook, halfpage
V
Fig.11 Minimum noise figure as a function of
CE
(dB)
F = 4 dB
2
F
= 1 V; T
4
3
2
1
0
10
2
F = 2.5 dB
frequency.
amb
2
2
Γ OPT
5
= 25 C.
−45°
45°
5
5
MRC075
F min = 1.9 dB
0°
10
3
1.0
0.8
0.6
0.4
0.2
0
1.0
I C = 2 mA
1 mA
0.5 mA
f (MHz)
Product specification
BFS25A
MCD146
10
4