BFG198,115 NXP Semiconductors, BFG198,115 Datasheet - Page 6
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BFG198,115
Manufacturer Part Number
BFG198,115
Description
TRANS NPN 10V 8GHZ SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BFG198115.pdf
(14 pages)
Specifications of BFG198,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Power - Max
1W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 50mA, 5V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 50mA @ 5V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.1 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933919930115
BFG198 T/R
BFG198 T/R
BFG198 T/R
BFG198 T/R
NXP Semiconductors
1995 Sep 12
handbook, halfpage
handbook, halfpage
P tot
NPN 8 GHz wideband transistor
(W)
I
E
(pF)
C re
= 0; f = 1 MHz; T
Fig.6
1.2
1.0
0.8
0.6
0.4
0.2
1.2
0.8
0.4
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.4 Power derating curve.
4
j
50
= 25 C.
8
100
12
150
16
T
V
s
CB
MBB751
MBB752
( C)
o
(V)
200
20
6
handbook, halfpage
handbook, halfpage
(GHz)
V
V
h FE
Fig.5
CE
CE
T f
160
120
Fig.7
= 5 V; T
= 8 V; f = 1 GHz; T
10
80
40
4
8
6
2
0
0
0
DC current gain as a function of collector
current.
j
= 25 C.
Transition frequency as a function of
collector current.
amb
40
40
= 25 C.
80
80
Product specification
I
I
C
C
(mA)
(mA)
BFG198
MBB267
MBB499
120
120