BFG198,115 NXP Semiconductors, BFG198,115 Datasheet - Page 6

• Manufacturer Part Number: BFG198,115
• Description: TRANS NPN 10V 8GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG198,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 5V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919930115; BFG198 T/R; BFG198 T/R

NXP Semiconductors
1995 Sep 12
handbook, halfpage
handbook, halfpage
P tot
NPN 8 GHz wideband transistor
(W)
I
E
(pF)
C re
= 0; f = 1 MHz; T
Fig.6
1.2
1.0
0.8
0.6
0.4
0.2
1.2
0.8
0.4
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.4 Power derating curve.
4
j
50
= 25 C.
8
100
12
150
16
T
V
s
CB
MBB751
MBB752
( C)
o
(V)
200
20
6
handbook, halfpage
handbook, halfpage
(GHz)
V
V
h FE
Fig.5
CE
CE
T f
160
120
Fig.7
= 5 V; T
= 8 V; f = 1 GHz; T
10
80
40
4
8
6
2
0
0
0
DC current gain as a function of collector
current.
j
= 25 C.
Transition frequency as a function of
collector current.
amb
40
40
= 25 C.
80
80
Product specification
I
I
C
C
(mA)
(mA)
BFG198
MBB267
MBB499
120
120