BFG198,115 NXP Semiconductors, BFG198,115 Datasheet - Page 8

• Manufacturer Part Number: BFG198,115
• Description: TRANS NPN 10V 8GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG198,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 5V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919930115; BFG198 T/R; BFG198 T/R

NXP Semiconductors
1995 Sep 12
handbook, halfpage
NPN 8 GHz wideband transistor
(dB)
V
f
Fig.12 Second order intermodulation distortion as
d 2
(p+q)
CE
= 8 V; V
35
40
45
50
55
60
= 810 MHz.
20
a function of collector current.
o
= 50 dBmV; T
40
amb
60
= 25 C
80
100
I
C
MBB268
(mA)
120
8
Product specification
BFG198