BFG198,115 NXP Semiconductors, BFG198,115 Datasheet - Page 7
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BFG198,115
Manufacturer Part Number
BFG198,115
Description
TRANS NPN 10V 8GHZ SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BFG198115.pdf
(14 pages)
Specifications of BFG198,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Power - Max
1W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 50mA, 5V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 50mA @ 5V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.1 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933919930115
BFG198 T/R
BFG198 T/R
BFG198 T/R
BFG198 T/R
NXP Semiconductors
1995 Sep 12
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
d im
(dB)
G UM
I
Fig.8
V
f
C
(p+q)
(dB)
Fig.10 Intermodulation distortion as a function of
CE
= 50 mA; V
= 8 V; V
45
50
55
60
65
70
40
30
20
10
= 793.25 MHz.
0
20
10
Maximum gain as a function of frequency.
collector current.
o
CE
= 700 mV; T
= 8 V; T
40
10
amb
amb
2
60
= 25 C;
= 25 C;
80
10
3
f (MHz)
100
I
C
MBB266
MBB753
(mA)
120
10
4
7
handbook, halfpage
handbook, halfpage
(dB)
(dB)
d im
V
f
d 2
V
f
(p+qr)
(p+q)
Fig.11 Second order intermodulation distortion as
CE
CE
Fig.9
= 8 V; V
= 8 V; V
45
50
55
60
65
70
35
40
45
50
55
60
= 450 MHz.
= 443.25 MHz.
20
20
a function of collector current.
Intermodulation distortion as a function of
collector current.
o
o
= 750 mV; T
= 50 dBmV; T
40
40
amb
amb
60
60
= 25 C;
= 25 C
80
80
Product specification
100
100
I
I
BFG198
C
C
MBB498
MBB497
(mA)
(mA)
120
120