BFG198,115 NXP Semiconductors, BFG198,115 Datasheet - Page 7

• Manufacturer Part Number: BFG198,115
• Description: TRANS NPN 10V 8GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG198,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 5V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919930115; BFG198 T/R; BFG198 T/R

NXP Semiconductors
1995 Sep 12
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
d im
(dB)
G UM
I
Fig.8
V
f
C
(p+q)
(dB)
Fig.10 Intermodulation distortion as a function of
CE
= 50 mA; V
= 8 V; V
45
50
55
60
65
70
40
30
20
10
= 793.25 MHz.
0
20
10
Maximum gain as a function of frequency.
collector current.
o
CE
= 700 mV; T
= 8 V; T
40
10
amb
amb
2
60
= 25 C;
= 25 C;
80
10
3
f (MHz)
100
I
C
MBB266
MBB753
(mA)
120
10
4
7
handbook, halfpage
handbook, halfpage
(dB)
(dB)
d im
V
f
d 2
V
f
(p+qr)
(p+q)
Fig.11 Second order intermodulation distortion as
CE
CE
Fig.9
= 8 V; V
= 8 V; V
45
50
55
60
65
70
35
40
45
50
55
60
= 450 MHz.
= 443.25 MHz.
20
20
a function of collector current.
Intermodulation distortion as a function of
collector current.
o
o
= 750 mV; T
= 50 dBmV; T
40
40
amb
amb
60
60
= 25 C;
= 25 C
80
80
Product specification
100
100
I
I
BFG198
C
C
MBB498
MBB497
(mA)
(mA)
120
120