BFS 17W E6327 Infineon Technologies, BFS 17W E6327 Datasheet - Page 2

• Manufacturer Part Number: BFS 17W E6327
• Description: TRANSISTOR NPN RF 15V SOT-323
• Manufacturer: Infineon Technologies

Specifications of BFS 17W E6327

• Package / Case: SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.4GHz
• Noise Figure (db Typ @ F): 3.5dB ~ 5dB @ 800MHz
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 2.5 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFS17WE6327; BFS17WE6327XT; SP000011082

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain-
I
I
Collector-emitter saturation voltage
I
C
C
C
C
CB
CB
EB
= 1 mA, I
= 2 mA, V
= 25 mA, V
= 10 mA, I
= 2.5 V, I
= 10 V, I
= 25 V, I
B
CE
B
E
E
= 0
C
CE
= 1 mA
= 0
= 0
= 0
= 1 V, pulse measured
= 1 V, pulse measured
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
h
V
CBO
EBO
FE
(BR)CEO
CEsat
min.
15
40
20
-
-
-
-
Values
typ.
0.1
70
-
-
-
-
-
max.
0.05
150
100
0.4
10
-
2007-03-30
-
BFS17W
Unit
V
µA
-
V