BFS 17W E6327 Infineon Technologies, BFS 17W E6327 Datasheet - Page 4

• Manufacturer Part Number: BFS 17W E6327
• Description: TRANSISTOR NPN RF 15V SOT-323
• Manufacturer: Infineon Technologies

Specifications of BFS 17W E6327

• Package / Case: SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.4GHz
• Noise Figure (db Typ @ F): 3.5dB ~ 5dB @ 800MHz
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 2.5 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFS17WE6327; BFS17WE6327XT; SP000011082

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
10
320
240
200
160
120
80
40
-
0
3
2
1
0
10
0
/P
-6
totDC
15
10
30
-5
=
45
10
(t
p
-4
60
)
75
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
90 105 120
tot
10
= (T
-2
S
s
)
T
t
°C
p
S
150
10
0
4
Permissible Pulse Load R
Collector-base capacitance C
Emitter-base capacitance C
f = 1 MHz
K/W
10
10
10
10
pF
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
3
2
1
0
10
0
-7
2
CCB
10
-6
4
10
CEB
6
-5
8
10
-4
10
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
12
thJS
-3
eb
14
10
cb
2007-03-30
=
= (V
BFS17W
-2
= (V
16
(t
t
V
s
p
EB
p
V
CB
)
CB
)
, V
10
20
)
EB
0