PBSS4140DPN,115 NXP Semiconductors, PBSS4140DPN,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS4140DPN,115
• Description: TRANS NPN/PNP 40V 1A SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBSS4140DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V
• Power - Max: 600mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 370 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4153-2; 934056660115; PBSS4140DPN T/R; PBSS4140DPN T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Dec 13
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
I
I
h
V
NPN transistor
h
V
V
R
f
C
PNP transistor
h
V
V
R
f
C
SYMBOL
amb
CBO
CEO
EBO
T
T
FE
FE
FE
CEsat
BEsat
BEon
BEsat
BEon
40 V low V
CEsat
c
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
DC current gain
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
collector capacitance
DC current gain
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
NPN/PNP transistor
V
V
V
V
V
I
I
I
V
V
I
V
I
V
V
V
V
V
I
V
I
V
f = 100 MHz
V
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CE
CB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 500 mA; I
= −1 A; I
= −500 mA; I
= 40 V; I
= 40 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
=10 V; I
= 10 V; I
= −5 V; I
= −5 V; I
= −5 V; I
= −5 V; I
= −10 V; I
= −10 V; I
B
B
B
C
= 100 mA
= 100 mA
C
C
C
C
CONDITIONS
C
4
= −50 mA
E
E
B
E
C
C
C
C
= 0
= 1 mA
= 500 mA
= 1 A
= 1 A
B
B
B
= 50 mA; f = 100 MHz
C
E
= 0
= 0; T
= 0
= I
= −100 mA
= −500 mA
= −1 A
= −1 A
B
= 1 mA
= 50 mA
= 50 mA; note 1
= I
= −50 mA;
e
−50 mA; note 1
e
= 0; f = 1 MHz
= 0; f =1 MHz
j
= 150 °C
−
−
−
−
300
−
−
−
300
200
−
−
−
150
−
300
250
160
−
−
−
150
−
MIN.
PBSS4140DPN
−
−
−
−
−
−
−
−
−
−
−
−
260
−
−
−
−
−
−
−
300
−
−
TYP.
Product data sheet
100
50
100
100
−
200
250
500
900
−
1.2
1.1
<500
−
10
800
−
−
−1.1
−1.0
<500
−
12
MAX.
nA
μA
nA
nA
mV
mV
mV
V
V
mΩ
MHz
pF
V
V
mΩ
MHz
pF
UNIT