PBSS4140DPN,115 NXP Semiconductors, PBSS4140DPN,115 Datasheet - Page 5
![TRANS NPN/PNP 40V 1A SOT457](/photos/1/38/13824/sc-74-6_sml.jpg)
PBSS4140DPN,115
Manufacturer Part Number
PBSS4140DPN,115
Description
TRANS NPN/PNP 40V 1A SOT457
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4140DPN115.pdf
(11 pages)
Specifications of PBSS4140DPN,115
Package / Case
SC-74-6
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 500mA, 5V
Power - Max
600mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
370 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4153-2
934056660115
PBSS4140DPN T/R
PBSS4140DPN T/R
934056660115
PBSS4140DPN T/R
PBSS4140DPN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS4140DPN,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2001 Dec 13
handbook, halfpage
handbook, halfpage
40 V low V
V CEsat
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.2
TR1 (NPN); I
(1) T
(2) T
(3) T
Fig.4
(mV)
h FE
1000
800
600
400
200
10
10
10
amb
amb
amb
amb
amb
amb
0
10
1
3
2
1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
= 5 V.
= 10.
1
10
CEsat
(2)
10
NPN/PNP transistor
10
2
(3)
10
(1)
(1)
(2)
(3)
2
10
10
3
I C (mA)
3
I C (mA)
MLD642
MLD636
10
10
4
4
5
handbook, halfpage
handbook, halfpage
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.3
TR1 (NPN); I
(1) T
(2) T
(3) T
Fig.5
R CEsat
(Ω)
V BE
10
10
(V)
10
10
10
−1
−1
amb
amb
amb
amb
amb
amb
10
10
1
1
2
−1
−1
= −55 °C.
= 25 °C.
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter voltage as a function of
collector current; typical values.
Equivalent on-resistance as a function of
collector current; typical values.
C
CE
/I
B
= 5 V.
= 10.
1
1
10
10
PBSS4140DPN
10
10
(1)
(2)
(3)
(1)
2
(2)
(3)
2
Product data sheet
10
10
3
3
I C (mA)
I C (mA)
MHC126
MLD635
10
10
4
4