BC807DS,115 NXP Semiconductors, BC807DS,115 Datasheet - Page 2

• Manufacturer Part Number: BC807DS,115
• Description: TRANSISTOR PNP 500MA 45V SOT457
• Manufacturer: NXP Semiconductors

Specifications of BC807DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 370mW
• Frequency - Transition: 80MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 500 mA
• Maximum Dc Collector Current: - 1 A
• Power Dissipation: 370 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057318115; BC807DS T/R; BC807DS T/R

NXP Semiconductors
FEATURES
• High current (500 mA)
• 600 mW total power dissipation
• Replaces two SOT23 packaged transistors on same
APPLICATIONS
• General purpose switching and amplification
• Push-pull amplifiers
• Multi-phase stepper motor drivers.
DESCRIPTION
PNP transistor pair in a SOT457 (SC-74) plastic package.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2002 Nov 22
BC807DS
Per transistor unless otherwise specified
V
V
V
I
I
I
P
T
T
T
Per device
P
SYMBOL
C
CM
BM
PCB area.
stg
j
amb
CBO
CEO
EBO
tot
tot
PNP general purpose double transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
PARAMETER
MARKING CODE
N2
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 1
2
QUICK REFERENCE DATA
PINNING
V
I
I
SYMBOL
C
CM
CEO
Fig.1
CONDITIONS
PIN
1, 4
2, 5
6, 3
Top view
Simplified outline (SOT457) and symbol.
6
1
collector-emitter voltage
collector current (DC)
peak collector current
emitter
base
collector
5
2
PARAMETER
4
3
DESCRIPTION
MAM457
TR1; TR2
TR1; TR2
TR1; TR2
−
−
−
−
−
−
−
−65
−
−65
−
MIN.
TR1
Product data sheet
6
1
BC807DS
−45
−500
−1
−50
−45
−5
−500
−1
−200
370
+150
150
+150
600
MAX.
MAX.
5
2
2
4
3
TR2
.
V
mA
A
V
V
V
mA
A
mA
mW
°C
°C
°C
mW
UNIT
UNIT