BC807DS,115 NXP Semiconductors, BC807DS,115 Datasheet - Page 3

• Manufacturer Part Number: BC807DS,115
• Description: TRANSISTOR PNP 500MA 45V SOT457
• Manufacturer: NXP Semiconductors

Specifications of BC807DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 370mW
• Frequency - Transition: 80MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 500 mA
• Maximum Dc Collector Current: - 1 A
• Power Dissipation: 370 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057318115; BC807DS T/R; BC807DS T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
CHARACTERISTICS
T
Notes
1. Pulse test: t
2. V
2002 Nov 22
R
Per transistor
I
I
h
V
V
C
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BE
PNP general purpose double transistor
th j-a
c
= 25 °C unless otherwise specified.
BE
decreases by approximately −2 mV/K with increasing temperature.
thermal resistance from junction to
ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
note 1
V
V
V
V
V
V
notes 1 and 2
V
V
f = 100 MHz
C
CB
CB
EB
CE
CE
CE
CB
CE
= −500 mA; I
= −5 V; I
= −20 V; I
= −20 V; I
= −1 V; I
= −1 V; I
= −1 V; I
= −10 V; I
= −5 V; I
3
CONDITIONS
C
C
C
C
C
E
E
E
CONDITIONS
= 0
= −100 mA; note 1
= −500 mA; note 1
= −10 mA;
= −500 mA;
B
= 0
= 0; T
= I
= −50 mA; note 1
e
= 0; f = 1 MHz
j
= 150 °C
−
−
−
160
40
−
−
−
80
MIN.
−
−
−
−
−
−
−
9
−
TYP.
VALUE
208
Product data sheet
BC807DS
−100
−5
−100
400
−
−700
−1.2
−
−
MAX.
2
UNIT
.
K/W
nA
μA
nA
mV
V
pF
MHz
UNIT