BC807DS,115 NXP Semiconductors, BC807DS,115 Datasheet - Page 5

• Manufacturer Part Number: BC807DS,115
• Description: TRANSISTOR PNP 500MA 45V SOT457
• Manufacturer: NXP Semiconductors

Specifications of BC807DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 370mW
• Frequency - Transition: 80MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 500 mA
• Maximum Dc Collector Current: - 1 A
• Power Dissipation: 370 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057318115; BC807DS T/R; BC807DS T/R

NXP Semiconductors
PACKAGE OUTLINE
2002 Nov 22
Plastic surface mounted package; 6 leads
PNP general purpose double transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT457
1.1
0.9
A
y
0.013
0.1
A 1
pin 1
index
6
1
0.40
0.25
b p
e
IEC
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
0
4
3
0.95
e
w
M
H E
3.0
2.5
B
SC-74
B
scale
EIAJ
5
1
0.6
0.2
L p
A
0.33
0.23
Q
A 1
2 mm
0.2
v
0.2
w
H E
E
detail X
PROJECTION
0.1
EUROPEAN
y
L p
Q
c
A
Product data sheet
BC807DS
ISSUE DATE
97-02-28
01-05-04
X
v
M
SOT457
A