TPCP8701(TE85L,F) Toshiba, TPCP8701(TE85L,F) Datasheet - Page 3
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TPCP8701(TE85L,F)
Manufacturer Part Number
TPCP8701(TE85L,F)
Description
IC TRANS DUAL NPN 50V 2-3V1C
Manufacturer
Toshiba
Datasheet
1.TPCP8701TE85LF.pdf
(5 pages)
Specifications of TPCP8701(TE85L,F)
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
140mV @ 20mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
400 @ 300mA, 2V
Power - Max
940mW
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
0.001
0.01
0.1
0.001
4
3
2
1
0
1
3
2
1
0
0
0
Common emitter
β = 50
Single nonrepetitive pulse
Common emitter
Ta = 25°C
Single nonrepetitive pulse
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Base−emitter saturation voltage V
Collector−emitter voltage V
0.2
70
Ta = 100°C
Collector current I
0.01
25°C
0.4
Ta = 100°C
V
0.4
CE (sat)
I
I
C
C
60
– V
– V
0.1
0.8
CE
BE
– I
0.6
25°C
C
−55°C
−55°C
C
50
CE
(A)
1.2
I B = 1 mA
1
0.8
BE
40
30
20
5
2
10
(V)
(V)
1.0
1.6
10
(2)
3
10000
1000
0.8
0.6
0.4
0.2
1.0
100
0.1
10
0.001
10
0.001
0
1
0
Common emitter
β = 50
Single nonrepetitive pulse
Common emitter
V CE = 2 V
Single nonrepetitive pulse
(2)
(1)
20
Ta = 100°C
25°C
Ambient temperature Ta (°C)
Collector current I
Collector current I
40
0.01
0.01
−55°C
25°C
DC Operation
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
(1) Single-device operation
(2) Single-device value at dual operation
Ta = −55°C
60
V
BE (sat)
P
h
c
FE
80
– Ta
0.1
0.1
– I
100°C
Ta = 25°C
C
– I
100
C
C
C
120
(A)
(A)
1
1
2
)
140
TPCP8701
2004-05-11
160
10
10