TPCP8901(TE85L,F) Toshiba, TPCP8901(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: TPCP8901(TE85L,F)
• Description: IC TRANS NPN PNP 50V 2-3V1C
• Manufacturer: Toshiba

Specifications of TPCP8901(TE85L,F)

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 1A, 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400, 200 @ 100mA, 2V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -

PNP
0.001
0.01
1.0
0.8
0.6
0.4
0.2
0.1
1.0
0.8
0.6
0.4
0.2
10
0.001
0
1
0
0
0
Base−emitter saturation voltage −V
Common emitter
V CE = −2 V
Single nonrepetitive pulse
Common emitter
β = 30
Single nonrepetitive pulse
Collector−emitter voltage −V
−100
0.2
0.2
Collector current −I
0.01
0.4
0.4
V
−50
CE (sat)
Ta = 100°C
I
I
C
C
25°C
Ta = 100°C
– V
– V
0.6
0.6
CE
BE
Common emitter
Ta = 25°C
Single nonrepetitive pulse
– I
C
0.1
0.8
0.8
C
−55°C
CE
(A)
I B = −1 mA
25°C
1.0
1.0
BE
−55°C
−20
−15
−10
−40
−30
−5
−2
(V)
(V)
1.2
1.2
1
4
10000
1000
0.01
100
0.1
0.1
10
0.001
10
0.001
10
1
1
1
0.1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (Pulse) ※
I C max (Pulse) ※
Common emitter
V CE = −2 V
Single nonrepetitive pulse
I C max (Continuous)*
Common emitter
β = 30
Single nonrepetitive pulse
Ta = 25°C
Collector−emitter voltage −V
2
).
25°C
Collector current −I
Collector current −I
Ta = 100°C
10 s※*
25°C
Ta = −55°C
0.01
0.01
Safe operation area
1
V
BE (sat)
h
10 ms※
FE
100 ms※*
−55°C
100 µs※
– I
100°C
C
– I
1 ms※
C
DC operation
Ta = 25°C
0.1
0.1
C
C
10
(A)
(A)
CE
TPCP8901
2004-03-04
(V)
10 µs※
1
1
100