MP4301(Q) Toshiba, MP4301(Q) Datasheet

MP4301(Q)

Manufacturer Part Number

MP4301(Q)

Description

TRANS MOD NPN QUAD 100V 3A 12SIP

Manufacturer

Toshiba

Datasheet

1.MP4301Q.pdf (6 pages)

Specifications of MP4301(Q)

Transistor Type

4 NPN Darlington

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

1.5V @ 3mA, 1.5A

Current - Collector Cutoff (max)

10µA

Dc Current Gain (hfe) (min) @ Ic, Vce

2000 @ 1.5A, 2V

Power - Max

2.2W

Frequency - Transition

60MHz

Mounting Type

Through Hole

Package / Case

12 Pin SIP Horz

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 6
Download datasheet (156Kb)

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching

•

Absolute Maximum Ratings

Small package by full molding (SIP 12 pin)

High collector power dissipation (4 devices operation)

: P

High collector current: I

High DC current gain: h

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Continuous base current

Collector power dissipation

(1-device operation)

Collector power dissipation

(4-device operation)

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

= 4.4 W (Ta = 25°C)

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type

Pulse

C (DC)

= 2000 (min) (V

(Four Darlington Power Transistor in One)

= 3 A (max)

(Ta = 25°C)

Symbol

CBO

CEO

EBO

stg

MP4301

= 2 V, I

−55 to 150

Rating

120

100

150

0.5

2.2

4.4

= 1.5 A)

Unit

°C

Weight: 3.9 g (typ.)

JEDEC

JEITA

TOSHIBA

2-32C1B

2006-10-27

―

MP4301

Unit: mm

Related parts for MP4301(Q)

MP4301(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Array Configuration ≈ 4.5 kΩ Marking MP4301 JAPAN Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation 25°C) Maximum lead temperature for soldering purposes (3.2 mm ...

Page 3

Electrical Characteristics Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Saturation voltage Base-emitter Transition frequency Collector output capacitance Turn-on time Storage time Switching time Fall time Emitter-Collector Diode ...

Page 4

I – Common emitter 25° 0. Collector-emitter voltage – ...

Page 5

Curves should be applied in thermal limited area. (Single nonrepetitive pulse) 100 The figure shows thermal resistance per device versus pulse width 0.3 0.001 0.01 Safe Operating Area max (pulsed)* 5 ...

Page 6

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

Related keywords

mp4301
mp430
MP4301(Q) datasheet
MP4301(Q) data sheet
MP4301(Q) pdf datasheet
MP4301(Q) component
MP4301(Q) part
MP4301(Q) distributor
MP4301(Q) RoHS
MP4301(Q) datasheet download