MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 118
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MT47H64M8CF-25E IT:G
Manufacturer Part Number
MT47H64M8CF-25E IT:G
Description
64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
Manufacturer
Micron Technology Inc
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Figure 72: REFRESH Command-to-Power-Down Entry
Figure 73: ACTIVATE Command-to-Power-Down Entry
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
Note:
Note:
Command
Command
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. The earliest active power-down entry may occur is at T2, which is 1 ×
CK#
CKE
CK#
CKE
CK
CK
REFRESH command. Precharge power-down entry occurs prior to
fied.
VATE command. Active power-down entry occurs prior to
Micron Confidential and Proprietary
Valid
Valid
T0
T0
REFRESH
VALID
ACT
T1
T1
118
512Mb: x8, x16 Automotive DDR2 SDRAM
1 t CK
1 x t CK
Power-down 1
Power-down 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
entry
entry
NOP
NOP
T2
T2
t CKE (MIN)
t CKE (MIN)
T3
T3
t
RCD (MIN) being satisfied.
Power-Down Mode
2010 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
t
RFC (MIN) being satis-
t
CK after the ACTI-
t
CK after the
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