MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 90

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

Figure 44: Consecutive READ Bursts
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
Notes:
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
4. Three subsequent elements of data-out appear in the programmed order following
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
CK#
CK#
DQ
DQ
CK
CK
DO n.
DO b.
READ
READ
Bank,
Bank,
Col n
Col n
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T0
T0
t CCD
RL = 3
t CCD
NOP
NOP
T1
T1
RL = 4
t
AC,
90
t
DQSCK, and
512Mb: x8, x16 Automotive DDR2 SDRAM
READ
READ
Bank,
Bank,
Col b
Col b
T2
T2
T2n
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NOP
NOP
t
T3
T3
DQSQ.
DO
n
T3n
T3n
NOP
NOP
T4
T4
DO
n
Transitioning Data
T4n
T4n
NOP
NOP
T5
T5
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DO
b
T5n
T5n
T6
NOP
T6
NOP
Don’t Care
DO
b
T6n
T6n
READ