MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 25

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

Table 10: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
Parameter/Condition
Operating one bank active-
precharge current:
t
commands; Address bus inputs are switching; Data bus in-
puts are switching
Operating one bank active-read-precharge current:
I
t
CKE is HIGH, CS# is HIGH between valid commands; Ad-
dress bus inputs are switching; Data pattern is same as
I
Precharge power-down current: All banks idle;
t
inputs are stable; Data bus inputs are floating
Precharge quiet standby
current: All banks idle;
HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All banks idle;
t
and address bus inputs are switching; Data bus inputs are
switching
Active power-down current: All banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All banks open;
t
HIGH between valid commands; Other control and ad-
dress bus inputs are switching; Data bus inputs are switch-
ing
Operating burst write current: All banks open, contin-
uous burst writes; BL = 4, CL = CL (I
t
is HIGH, CS# is HIGH between valid commands; Address
bus inputs are switching; Data bus inputs are switching
Operating burst read current: All banks open, continu-
ous burst reads, I
t
is HIGH, CS# is HIGH between valid commands; Address
bus inputs are switching; Data bus inputs are switching
RAS MIN (I
OUT
RC =
DD4W
CK =
CK =
CK =
RAS =
CK =
CK =
= 0mA; BL = 4, CL = CL (I
t
t
t
t
t
t
RC (I
CK (I
CK (I
CK (I
CK (I
CK (I
t
RAS MAX (I
DD
DD
DD
DD
DD
DD
DD
),
); CKE is LOW; Other control and address bus
); CKE is HIGH, CS# is HIGH; Other control
); CKE is LOW; Other control and address bus
),
),
); CKE is HIGH, CS# is HIGH between valid
t
t
t
RAS =
RAS =
RAS =
OUT
DD
DD
= 0mA; BL = 4, CL = CL (I
t
),
CK =
t
t
t
Specifications and Conditions
RAS MIN (I
RAS MAX (I
RAS MAX (I
t
t
RP =
CK =
t
CK (I
DD
t
RP (I
t
CK (I
), AL = 0;
DD
DD
DD
DD
DD
),
DD
DD
),
); CKE is HIGH, CS# is
t
),
),
RC =
), AL = 0;
); CKE is HIGH, CS# is
t
RCD =
t
t
RP =
RP =
t
Micron Confidential and Proprietary
CK =
t
t
RC (I
CK =
t
t
t
RP (I
RP (I
DD
RCD (I
t
CK (I
), AL = 0;
DD
t
CK (I
DD
DD
),
DD
DD
t
); CKE
); CKE
RAS =
),
);
DD
),
25
Symbol
512Mb: x8, x16 Automotive DDR2 SDRAM
I
I
I
I
I
I
I
Electrical Specifications – I
I
DD4W
DD3Pf
DD3Ps
I
I
DD2Q
DD2N
DD3N
DD2P
DD4R
DD0
DD1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Configuration
MR12 = 0
MR12 = 1
Slow exit
Fast exit
x8, x16
x16
x16
x16
x16
x16
x16
x16
x8
x8
x8
x8
x8
x8
x8
-25E/
125
160
120
150
-25
65
80
75
95
24
26
28
30
18
33
35
7
9
‹ 2010 Micron Technology, Inc. All rights reserved.
DD
-3E/
115
135
110
125
60
75
70
90
22
24
25
27
15
30
32
Parameters
-3
7
9
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA