MT48H4M32LFB5-75 IT:K Micron Technology Inc, MT48H4M32LFB5-75 IT:K Datasheet - Page 23

• Manufacturer Part Number: MT48H4M32LFB5-75 IT:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H4M32LFB5-75 IT:K

• Package: 90VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: -40 to 85 °C

Output Drive Characteristics
Table 12: Target Output Drive Characteristics (Full Strength)
Notes 1–2 apply to all parameters and conditions; characteristics are specified under best and worst process variations/con-
ditions
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Voltage (V)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.85
0.90
0.95
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
Notes:
1. Table values based on nominal impedance of 25Ω (full drive strength) at V
2. The full variation in drive current, from minimum to maximum (due to process, voltage,
11.20
14.00
16.80
19.60
22.40
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
Min
0.00
2.80
5.60
8.40
Pull-Down Current (mA)
–
–
and temperature) will lie within the outer bounding lines of the I-V curves.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
18.53
26.80
32.80
37.05
40.00
42.50
44.57
46.50
47.48
48.50
49.40
50.05
51.35
52.65
53.95
55.25
56.55
57.85
59.15
60.45
61.75
Max
0.00
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–11.20
–14.00
–16.80
–19.60
–22.40
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–2.80
–5.60
–8.40
Min
0.00
Output Drive Characteristics
–
–
Pull-Up Current (mA)
©2008 Micron Technology, Inc. All rights reserved.
–18.53
–26.80
–32.80
–37.05
–40.00
–42.50
–44.57
–46.50
–47.48
–48.50
–49.40
–50.05
–51.35
–52.65
–53.95
–55.25
–56.55
–57.85
–59.15
–60.45
–61.75
Max
0.00
DDQ/2
.