MT48H4M32LFB5-75 IT:K Micron Technology Inc, MT48H4M32LFB5-75 IT:K Datasheet - Page 32
MT48H4M32LFB5-75 IT:K
Manufacturer Part Number
MT48H4M32LFB5-75 IT:K
Description
DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 1.8V 90-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H8M16LFB4-6K.pdf
(86 pages)
Specifications of MT48H4M32LFB5-75 IT:K
Package
90VFBGA
Density
128 Mb
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
8|5.4 ns
Operating Temperature
-40 to 85 °C
- Current page: 32 of 86
- Download datasheet (3Mb)
SELF REFRESH
DEEP POWER-DOWN
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
The SELF REFRESH command is used to place the device in self refresh mode. The self
refresh mode is used to retain data in the SDRAM while the rest of the system is pow-
ered down. When in self refresh mode, the device retains data without external clock-
ing. The SELF REFRESH command is initiated like an AUTO REFRESH command,
except that CKE is disabled (LOW). After the SELF REFRESH command is registered, the
inputs become “Don’t Care,” with the exception of CKE, which must remain LOW.
The DEEP POWER-DOWN (DPD) command is used to enter deep power-down mode,
achieving maximum power reduction by eliminating the power to the memory array.
To enter DPD, all banks must be idle. While CKE is LOW, hold CS# and WE# LOW, and
hold RAS# and CAS# HIGH at the rising edge of the clock. To exit DPD, assert CKE HIGH.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
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