MT48LC16M16A2P-6A:D Micron Technology Inc, MT48LC16M16A2P-6A:D Datasheet - Page 35

• Manufacturer Part Number: MT48LC16M16A2P-6A:D
• Description: DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M16A2P-6A:D

• Density: 256 Mb
• Maximum Clock Rate: 167 MHz
• Package: 54TSOP-II
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Organization: 16Mx16
• Address Bus: 15b
• Access Time (max): 5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

WRITE
Figure 15: WRITE Command
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Note:
The WRITE command is used to initiate a burst write access to an active row. The val-
ues on the BA0 and BA1 inputs select the bank; the address provided selects the starting
column location. The value on input A10 determines whether auto precharge is used. If
auto precharge is selected, the row being accessed is precharged at the end of the write
burst; if auto precharge is not selected, the row remains open for subsequent accesses.
Input data appearing on the DQ is written to the memory array, subject to the DQM
input logic level appearing coincident with the data. If a given DQM signal is registered
LOW, the corresponding data is written to memory; if the DQM signal is registered
HIGH, the corresponding data inputs are ignored and a WRITE is not executed to that
byte/column location.
BA0, BA1
Address
1. EN AP = enable auto precharge, DIS AP = disable auto precharge.
RAS#
CAS#
A10
WE#
CKE
CLK
CS#
1
HIGH
Valid address
Column address
Bank address
DIS AP
EN AP
35
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 SDRAM
© 1999 Micron Technology, Inc. All rights reserved.
Commands