MT48LC32M16A2TG-75:C Micron Technology Inc, MT48LC32M16A2TG-75:C Datasheet - Page 44

• Manufacturer Part Number: MT48LC32M16A2TG-75:C
• Description: DRAM Chip SDRAM 512M-Bit 32Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC32M16A2TG-75:C

• Density: 512 Mb
• Maximum Clock Rate: 133 MHz
• Package: 54TSOP-II
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C
• Organization: 32Mx16
• Address Bus: 15b
• Access Time (max): 6/5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 115mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

Table 13:
Table 14:
Table 15:
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
Parameter/Condition
Parameter/Condition
Parameter
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current: Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current: DQs are disabled;
0V ≤ V
Output levels:
Output high voltage (I
Output low voltage (I
Operating current: Active mode;
Burst = 2; READ or WRITE;
Standby current: power-down mode;
CKE = LOW; All banks idle
Standby current: Active mode; CS# = HIGH;
CKE = HIGH; All banks active after
No accesses in progress
Operating current: Burst mode; Page burst;
READ or WRITE; All banks active
Auto refresh current:
CS# = HIGH; CKE = HIGH
Self refresh current: CKE ≤ 0.2V
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/output capacitance: DQs
OUT
≤ V
DC Electrical Characteristics And Operating Conditions
Notes 1, 5, and 6 apply to entire table; notes appear on page 47; V
I
Notes 1, 5, 6, 11, and 13 apply to entire table; notes appear on page 47; V
Capacitance
Note 2 applies to entire table; notes appear on page 47
DD
DD
Q
Specifications and Conditions
OUT
OUT
= 4mA)
t
= –4mA)
RC =
t
RC (MIN)
t
RCD met;
IN
Standard
t
t
Low power (L)
RFC =
RFC = 7.81µs
≤ V
DD
t
RFC (MIN)
44
V
Symbol
Symbol
DD
I
I
I
I
I
I
I
I
V
V
V
, V
I
DD
DD
DD
DD
DD
DD
DD
DD
V
OZ
OH
I
OL
IH
IL
I
1
2
3
4
5
6
7
7
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q
Symbol
Min
–0.3
120
125
255
-7E
2.4
3.5
C
C
C
–5
–5
45
3
2
6
6
3
–
I
I
I
DD
O
1
2
, V
Max
512Mb: x4, x8, x16 SDRAM
DD
DD
V
Q = +3.3V ±0.3V
DD
Electrical Specifications
Max
, V
Min
110
115
255
-75
3.6
0.8
0.4
3.5
2.5
2.5
4.0
45
5
5
6
6
3
–
+ 0.3
DD
©2000 Micron Technology, Inc. All rights reserved.
Q = +3.3V ±0.3V
Units
Units
Max
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
3.5
3.8
6.0
V
V
V
V
V
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 18, 19,
Notes
Notes
29, 30
Units
22
22
26
26
29
29
29
29
pF
pF
pF
•