MT48LC4M16A2TG-7E IT:G Micron Technology Inc, MT48LC4M16A2TG-7E IT:G Datasheet - Page 55

• Manufacturer Part Number: MT48LC4M16A2TG-7E IT:G
• Description: DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M16A2TG-7E IT:G

• Density: 64 Mb
• Maximum Clock Rate: 143 MHz
• Package: 54TSOP-II
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 5.4 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Organization: 4Mx16
• Address Bus: 14b
• Access Time (max): 5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 38:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
DQML, DQMH
COMMAND
A0–A9, A11
DQM /
BA0, BA1
Auto Refresh Mode
CKE
A10
CLK
DQ
High-Z
Notes:
Precharge all
t CKS
active banks
t CMS
t AS
SINGLE BANK
ALL BANKS
BANK(S)
PRECHARGE
T0
t AH
t CKH
t CMH
t CK
1. Each AUTO REFRESH command performs a refresh cycle. Back-to-back commands are not
required.
t RP
T1
NOP
T2
REFRESH
AUTO
t CH
t RFC 1
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CL
Tn + 1
REFRESH
AUTO
t RFC 1
NOP
64Mb: x4, x8, x16 SDRAM
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©2000 Micron Technology, Inc. All rights reserved.
Timing Diagrams
To + 1
ACTIVE
ROW
ROW
BANK
DON’T CARE