BGD714 NXP Semiconductors, BGD714 Datasheet - Page 2

• Manufacturer Part Number: BGD714
• Description: RF Amp Module Single GP Amp 750MHz 30V 7-Pin SOT-115J Bulk
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD714

• Package: 7SOT-115J
• Typical Power Gain: 21.3@750MHz dB
• Maximum Output Return Loss: 17(Min)@790MHz dB
• Maximum Supply Voltage: 30 V
• Operating Frequency: 750 MHz
• Noise Figure: 7 dB at 750 MHz
• Supply Current: 410 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGD714,112

NXP Semiconductors
FEATURES
 Excellent linearity
 Extremely low noise
 Excellent return loss properties
 Silicon nitride passivation
 Rugged construction
 Gold metallization ensures excellent reliability.
APPLICATIONS
 CATV systems operating in the 40 to 750 MHz
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 02
G
I
V
V
T
T
tot
frequency range.
SYMBOL
SYMBOL
stg
mb
B
i
750 MHz, 20.3 dB gain power doubler
amplifier
p
power gain
total current consumption (DC)
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
PARAMETER
f = 45 MHz
f = 750 MHz
V
B
= 24 V
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
PIN
2, 3
7, 8
1
5
9
Side view
Fig.1 Simplified outline.
1
2
input
common
+V
output
common
20
20.8
380


40
20
3
B
MIN.
MIN.
5
7
8
DESCRIPTION
9
Product specification
20.6
21.8
410
30
70
+100
+100
MSA319
MAX.
MAX.
BGD714
dB
dB
mA
V
dBmV
C
C
UNIT
UNIT