BGD714 NXP Semiconductors, BGD714 Datasheet - Page 5

• Manufacturer Part Number: BGD714
• Description: RF Amp Module Single GP Amp 750MHz 30V 7-Pin SOT-115J Bulk
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD714

• Package: 7SOT-115J
• Typical Power Gain: 21.3@750MHz dB
• Maximum Output Return Loss: 17(Min)@790MHz dB
• Maximum Supply Voltage: 30 V
• Operating Frequency: 750 MHz
• Noise Figure: 7 dB at 750 MHz
• Supply Current: 410 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGD714,112

NXP Semiconductors
2001 Nov 02
handbook, halfpage
handbook, halfpage
750 MHz, 20.3 dB gain power doubler
amplifier
Z
tilt = 7.3 dB (50 to 550 MHz).
(1) V
(2) Typ. +3 .
Fig.2
Z
tilt = 7.3 dB (50 to 550 MHz).
(1) V
(2) Typ. +3 .
Fig.4
S
S
CSO
(dB)
CTB
(dB)
= Z
= Z
−50
−60
−70
−80
−90
−50
−60
−70
−80
−90
o
o
L
L
.
.
0
0
= 75 ; V
= 75 ; V
Composite second order distortion as a
Composite triple beat as a function of
frequency under tilted conditions.
function of frequency under tilted
conditions.
B
B
= 24 V; 79 channels;
= 24 V; 79 channels;
200
200
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
f (MHz)
f (MHz)
MCD845
MCD847
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
800
800
(dBmV)
(dBmV)
56
52
48
44
40
56
52
48
44
40
V o
V o
5
handbook, halfpage
Z
tilt = 7.3 dB (50 to 550 MHz).
(1) V
(2) Typ. +3 .
Fig.3
X mod
S
(dB)
= Z
−50
−60
−70
−80
−90
o
L
.
0
= 75 ; V
Cross modulation as a function of frequency
under tilted conditions.
B
200
= 24 V; 79 channels;
(3) Typ.
(4) Typ. 3 .
400
(1)
Product specification
600
f (MHz)
BGD714
MCD846
(2)
(3)
(4)
800
(dBmV)
56
52
48
44
40
V o