PBSS2515E,115 NXP Semiconductors, PBSS2515E,115 Datasheet

TRANS NPN 15V .5A LOW SAT SC75

PBSS2515E,115

Manufacturer Part Number
PBSS2515E,115
Description
TRANS NPN 15V .5A LOW SAT SC75
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS2515E,115

Package / Case
EMT3 (SOT-416, SC-75-3)
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 100mA, 2V
Power - Max
250mW
Frequency - Transition
420MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4148-2
934059166115
PBSS2515E T/R
PBSS2515E T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS2515E,115
Manufacturer:
NXP Semiconductors
Quantity:
2 300
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3515E.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS2515E
15 V, 0.5 A NPN low V
Rev. 02 — 21 April 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
Pulse test: t
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
Breakthrough In Small Signal (BISS) transistor in an ultra small
300 s;
0.02.
FE
CEsat
) at high I
Conditions
open base
single pulse;
t
I
I
C
p
C
B
= 50 mA
= 500 mA;
and I
1 ms
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
300
Product data sheet
Max
15
0.5
1
500
Unit
V
A
A
m

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PBSS2515E,115 Summary of contents

Page 1

PBSS2515E 15 V, 0.5 A NPN low V Rev. 02 — 21 April 2009 1. Product profile 1.1 General description NPN low V SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515E. 1.2 Features I Low collector-emitter saturation voltage ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS2515E 4. Marking Table 4. Type number PBSS2515E 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 3

... NXP Semiconductors (1) FR4 PCB, mounting pad for collector 1 cm (2) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 3 10 duty cycle = 1 Z 0.75 th(j-a) (K/W) 0.5 0.33 0 0.1 0.05 0. FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 10 duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0.33 ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol I CBO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS2515E_2 Product data sheet Characteristics Parameter Conditions collector-base cut-off current 150 C j emitter-base cut-off current DC current gain collector-emitter mA saturation voltage I = 200 mA 500 mA; I ...

Page 6

... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb Fig 4. DC current gain as a function of collector current; typical values 1100 V BE (mV) 900 (1) 700 (2) 500 (3) 300 100 ( amb ( amb ( 100 C amb Fig 6. Base-emitter voltage as a function of collector current; typical values ...

Page 7

... NXP Semiconductors 1 V CEsat ( ( ( 100 C amb ( amb ( amb Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values PBSS2515E_2 Product data sheet 15 V, 0.5 A NPN low V ...

Page 8

... NXP Semiconductors 8. Test information Fig 12. BISS transistor switching time definition Fig 13. Test circuit for switching times PBSS2515E_2 Product data sheet (probe) oscilloscope 450 250 mA 12.5 mA Bon Rev. 02 — 21 April 2009 PBSS2515E 15 V, 0.5 A NPN low V CEsat input pulse (idealized waveform) I (100 %) ...

Page 9

... NXP Semiconductors 9. Package outline Fig 14. Package outline SOT416 (SC-75) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS2515E [1] For further information and the availability of packing methods, see 11. Soldering Fig 15. Reflow soldering footprint SOT416 (SC-75) ...

Page 10

... Document ID Release date PBSS2515E_2 20090421 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Figure • Table 6 “Thermal • ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history ...

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