PBSS2515E,115 NXP Semiconductors, PBSS2515E,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS2515E,115
• Description: TRANS NPN 15V .5A LOW SAT SC75
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515E,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 250mW
• Frequency - Transition: 420MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4148-2; 934059166115; PBSS2515E T/R; PBSS2515E T/R

NXP Semiconductors
PBSS2515E_2
Product data sheet
Fig 4.
Fig 6.
(mV)
V
h
1100
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
800
600
400
200
900
700
500
300
100
0
10
10
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 2 V
= 2 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
I
I
006aaa364
006aaa365
C
C
(mA)
(mA)
10
10
Rev. 02 — 21 April 2009
3
3
Fig 5.
Fig 7.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
1.2
0.8
0.4
1.3
0.9
0.5
0.1
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
15 V, 0.5 A NPN low V
C
amb
amb
amb
amb
1
/I
B
= 20
= 25 C
= 55 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
2
10
PBSS2515E
3
CEsat
10
I
© NXP B.V. 2009. All rights reserved.
B
2
(BISS) transistor
4
= 5.0 mA
I
006aaa370
006aaa368
C
V
CE
(mA)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
(V)
10
5
3
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