PBSS5140T,215 NXP Semiconductors, PBSS5140T,215 Datasheet

TRANS PNP 40V 1A SOT23

PBSS5140T,215

Manufacturer Part Number
PBSS5140T,215
Description
TRANS PNP 40V 1A SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS5140T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 100mA, 5V
Power - Max
450mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
300
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
- 2 A
Power Dissipation
300 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4163-2
934056330215
PBSS5140T T/R
PBSS5140T T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS5140T,215
Manufacturer:
NXP Semiconductors
Quantity:
4 600
Part Number:
PBSS5140T,215
Manufacturer:
NXP
Quantity:
1 000
Part Number:
PBSS5140T,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4140T.
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS5140T
40 V, 1 A PNP low V
Rev. 04 — 29 July 2008
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
General-purpose switching and muting
LCD backlighting
Supply line switching circuits
Battery-driven equipment (mobile phones, video cameras and handheld devices)
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
300 s;
0.02.
CEsat
FE
) at high I
Conditions
open base
single pulse;
t
I
I
C
p
C
B
BISS transistor
= 50 mA
= 500 mA;
and I
1 ms
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
300
Product data sheet
Max
< 500
40
1
2
Unit
V
A
A
m

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PBSS5140T,215 Summary of contents

Page 1

PBSS5140T PNP low V Rev. 04 — 29 July 2008 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T. 1.2 Features I Low collector-emitter saturation voltage V ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS5140T 4. Marking Table 4. Type number PBSS5140T [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 3 10 duty cycle = Z 1 th(j-a) (K/W) 0.75 0.5 0. 0.2 0.1 0.05 0. FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 10 duty cycle = Z th(j-a) 1 (K/W) 0.75 0 0.33 0.2 0.1 ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol I CBO I CEO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS5140T_4 Product data sheet Characteristics Parameter Conditions collector-base cut-off current 150 C j collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter I = 100 mA ...

Page 6

... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb Fig 4. DC current gain as a function of collector current; typical values 1 (V) (1) 0.8 (2) ( amb ( amb ( 100 C amb Fig 6. Base-emitter voltage as a function of collector current; typical values PBSS5140T_4 Product data sheet ...

Page 7

... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5140T_4 Product data sheet 006aab315 V CEsat (mA) C Fig 9 ...

Page 8

... NXP Semiconductors 8. Test information Fig 12. BISS transistor switching time definition Fig 13. Test circuit for switching times PBSS5140T_4 Product data sheet (probe) oscilloscope 450 0 mA Bon Rev. 04 — 29 July 2008 PBSS5140T PNP low V CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse ...

Page 9

... NXP Semiconductors 9. Package outline Fig 14. Package outline SOT23 (TO-236AB) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS5140T [1] For further information and the availability of packing methods, see PBSS5140T_4 Product data sheet 3 ...

Page 10

... NXP Semiconductors 11. Soldering 3 1.7 Fig 15. Reflow soldering footprint SOT23 (TO-236AB) 4.6 2.6 Fig 16. Wave soldering footprint SOT23 (TO-236AB) PBSS5140T_4 Product data sheet 3.3 2.9 1 2 1.4 2.8 4.5 Rev. 04 — 29 July 2008 PBSS5140T PNP low V BISS transistor ...

Page 11

... Release date PBSS5140T_4 20080729 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table 4 “Marking • Table 5 “Limiting • ...

Page 12

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 Revision history ...

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