PBSS5140T,215 NXP Semiconductors, PBSS5140T,215 Datasheet - Page 7

TRANS PNP 40V 1A SOT23

PBSS5140T,215

Manufacturer Part Number
PBSS5140T,215
Description
TRANS PNP 40V 1A SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS5140T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 100mA, 5V
Power - Max
450mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
300
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
- 2 A
Power Dissipation
300 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4163-2
934056330215
PBSS5140T T/R
PBSS5140T T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS5140T,215
Manufacturer:
NXP Semiconductors
Quantity:
4 600
Part Number:
PBSS5140T,215
Manufacturer:
NXP
Quantity:
1 000
Part Number:
PBSS5140T,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
PBSS5140T_4
Product data sheet
Fig 8.
Fig 10. Collector-emitter saturation resistance as a
R
V
CEsat
CEsat
(V)
( )
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
10
10
10
10
10
10
1
1
1
2
3
3
2
1
10
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
1
B
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
(1)
(2)
(3)
10
10
10
10
2
2
(1)
(2)
(3)
10
10
006aab315
006aab317
3
I
3
I
C
C
(mA)
(mA)
10
10
Rev. 04 — 29 July 2008
4
4
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
CEsat
( )
(V)
10
10
10
(1) I
(2) I
(3) I
10
(1) I
(2) I
(3) I
10
10
10
1
1
1
2
3
3
2
1
10
10
T
Collector-emitter saturation voltage as a
function of collector current; typical values
T
function of collector current; typical values
C
C
C
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
1
1
B
B
B
B
B
B
40 V, 1 A PNP low V
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
1
1
(1)
(2)
(3)
(2)
(3)
(1)
10
10
PBSS5140T
10
10
2
2
CEsat
© NXP B.V. 2008. All rights reserved.
10
10
006aab316
006aab318
BISS transistor
3
I
3
I
C
C
(mA)
(mA)
10
10
4
4
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